Professor

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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ÀüÈ­: (02) 705-8909 

Æѽº: (02) 706-4216

½ÇÇè½Ç: (02) 714-6205

E-mail: burm@sogang.ac.kr

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¼­¿ï´ëÇб³ ÀÚ¿¬°úÇдëÇÐ ¹°¸®Çаú Á¹¾÷ Çлç 1987³â 2¿ù

¹Ì½Ã°£ ´ëÇб³ (University of Michigan, Ann Arbor, MI) ¹°¸®Çаú ¼®»ç 1988³â 12¿ù

ÄÚ³Ú´ëÇб³ (Cornell University, Ithaca, NY) ÀÀ¿ë¹°¸®Çаú ¼®»ç 1992³â 8¿ù

ÄÚ³Ú´ëÇб³ (Cornell University, Ithaca, NY) ÀÀ¿ë¹°¸®Çаú ¹Ú»ç 1995³â 5¿ù

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Postdoctoral Associate, ÄÚ³Ú´ëÇб³ 1995³â 7¿ù-1996³â 8¿ù

¿¬±¸¿ø, º§¿¬±¸¼Ò (Bell Labs., Murray Hill, NJ) 1996³â 9¿ù-1998³â 2¿ù

¼­°­´ëÇб³ °ø°ú´ëÇÐ ÀüÀÚ°øÇаú Á¶±³¼ö 1998³â 3¿ù

¼­°­´ëÇб³ °ø°ú´ëÇÐ ÀüÀÚ°øÇаú Á¤±³¼ö ÇöÀç

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ÀÀ¿ëȸ·Î : ±¤Åë½Å¿ë °í¼Óȸ·Î (10 Gbit/s¿Í 40Gbit/s), ÃÊ°íÁÖÆÄ ÁýÀûȸ·Î (RFIC, MMIC), Analog Front End ȸ·Î

Sensor interface ȸ·Î

¹ÝµµÃ¼ ¼ÒÀÚ : GaN°è ¹ÝµµÃ¼¼ÒÀÚ (ÁÖ·Î FET), GaAs°è ¹ÝµµÃ¼¼ÒÀÚ (Photodetector¿Í HEMT), InP°è ¹ÝµµÃ¼¼ÒÀÚ (Photodetector, HEMT, HBT) Schottky Barrier, Ohmic Contact, Carrier Transport, CMOS

 

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Monolithic Millimeter Wave Optical Receivers Using Metal-Semiconductor-Metal Photodetectors and Pseudomorphic Modulation Doped Field Effect Transistors, Cornell University, May (1995)

 

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J. Burm, ¡°GaN Based Transistors¡±, Chapter C4, Electronic Materials Information Service Datareview Series, J. H. Edgar, T. Strite, I. Akasaki, and H. Amano, Ed., in preparation to be published by The Institution of Electrical Engineers, Hertfordshire, United Kingdom.

 

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