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¼º¸í ¹ü Áø ¿í Ûõ òå éï ±Ù¹«Ã³ ¼¿ï ¸¶Æ÷±¸ ¹é¹ü·Î 35 ¼°´ëÇб³ °ø°ú´ëÇÐ ÀüÀÚ°øÇаú ±³¼ö ¡¡ ÀüÈ: (02) 705-8909 Æѽº: (02) 706-4216 ½ÇÇè½Ç: (02) 714-6205 E-mail: burm@sogang.ac.kr ¡¡ Çз ¼¿ï´ëÇб³ ÀÚ¿¬°úÇдëÇÐ ¹°¸®Çаú Á¹¾÷ Çлç 1987³â 2¿ù ¹Ì½Ã°£ ´ëÇб³ (University of Michigan, Ann Arbor, MI) ¹°¸®Çаú ¼®»ç 1988³â 12¿ù ÄÚ³Ú´ëÇб³ (Cornell University, Ithaca, NY) ÀÀ¿ë¹°¸®Çаú ¼®»ç 1992³â 8¿ù ÄÚ³Ú´ëÇб³ (Cornell University, Ithaca, NY) ÀÀ¿ë¹°¸®Çаú ¹Ú»ç 1995³â 5¿ù ¡¡ °æ·Â Postdoctoral Associate, ÄÚ³Ú´ëÇб³ 1995³â 7¿ù-1996³â 8¿ù ¿¬±¸¿ø, º§¿¬±¸¼Ò (Bell Labs., Murray Hill, NJ) 1996³â 9¿ù-1998³â 2¿ù ¼°´ëÇб³ °ø°ú´ëÇÐ ÀüÀÚ°øÇаú Á¶±³¼ö 1998³â 3¿ù ¼°´ëÇб³ °ø°ú´ëÇÐ ÀüÀÚ°øÇаú Á¤±³¼ö ÇöÀç ¡¡ ¿¬±¸ºÐ¾ß ÀÀ¿ëȸ·Î : ±¤Åë½Å¿ë °í¼Óȸ·Î (10 Gbit/s¿Í 40Gbit/s), ÃÊ°íÁÖÆÄ ÁýÀûȸ·Î (RFIC, MMIC), Analog Front End ȸ·Î Sensor interface ȸ·Î ¹ÝµµÃ¼ ¼ÒÀÚ : GaN°è ¹ÝµµÃ¼¼ÒÀÚ (ÁÖ·Î FET), GaAs°è ¹ÝµµÃ¼¼ÒÀÚ (Photodetector¿Í HEMT), InP°è ¹ÝµµÃ¼¼ÒÀÚ (Photodetector, HEMT,
HBT) Schottky Barrier, Ohmic
Contact, Carrier Transport, CMOS ÇÐÀ§³í¹® Monolithic Millimeter
Wave Optical Receivers Using Metal-Semiconductor-Metal Photodetectors and Pseudomorphic Modulation Doped Field Effect Transistors, Àú¼ J. Burm, ¡°GaN Based Transistors¡±, Chapter C4, Electronic Materials Information Service Datareview Series, J. H. Edgar, T. Strite, I. Akasaki, and H. Amano, Ed., in preparation to be published by The Institution of Electrical Engineers, Hertfordshire, United Kingdom. |
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